SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Daniela Munteanu, Jean-Luc Autran. SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. Microelectronics Reliability, 55(9-10):1501-1505, 2015. [doi]

@article{MunteanuA15,
  title = {SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation},
  author = {Daniela Munteanu and Jean-Luc Autran},
  year = {2015},
  doi = {10.1016/j.microrel.2015.06.107},
  url = {http://dx.doi.org/10.1016/j.microrel.2015.06.107},
  researchr = {https://researchr.org/publication/MunteanuA15},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {55},
  number = {9-10},
  pages = {1501-1505},
}