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Atomic-layer-deposited silicon-nitride/SiO::2:: stack--a highly potential gate dielectrics for advanced CMOS technology

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama. Atomic-layer-deposited silicon-nitride/SiO::2:: stack--a highly potential gate dielectrics for advanced CMOS technology. Microelectronics Reliability, 42(12):1823-1835, 2002. [doi]

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