Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties - researchr publication authors

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A. Nannipieri, Giuseppe Iannaccone, Felice Crupi. Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties. Microelectronics Reliability, 44(9-11):1497-1501, 2004. [doi]

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