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Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties

A. Nannipieri, Giuseppe Iannaccone, Felice Crupi. Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties. Microelectronics Reliability, 44(9-11):1497-1501, 2004. [doi]

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