Charge trapping and degradation in Ge:::+::: ion implanted SiO::2:: layers during high-field electron injection - researchr publication authors

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A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa. Charge trapping and degradation in Ge:::+::: ion implanted SiO::2:: layers during high-field electron injection. Microelectronics Reliability, 42(9-11):1461-1464, 2002. [doi]

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