A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa. Charge trapping and degradation in Ge:::+::: ion implanted SiO::2:: layers during high-field electron injection. Microelectronics Reliability, 42(9-11):1461-1464, 2002. [doi]
@article{NazarovOLGRS02,
title = {Charge trapping and degradation in Ge:::+::: ion implanted SiO::2:: layers during high-field electron injection},
author = {A. N. Nazarov and I. N. Osiyuk and V. S. Lysenko and T. Gebel and L. Rebohle and W. Skorupa},
year = {2002},
doi = {10.1016/S0026-2714(02)00170-1},
url = {http://dx.doi.org/10.1016/S0026-2714(02)00170-1},
researchr = {https://researchr.org/publication/NazarovOLGRS02},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {42},
number = {9-11},
pages = {1461-1464},
}