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Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements

G. Néau, F. Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau. Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. Microelectronics Reliability, 47(4-5):567-572, 2007. [doi]

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G. Néau

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F. Martinez

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M. Valenza

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J. C. Vildeuil

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E. Vincent

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Frédéric Boeuf

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F. Payet

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K. Rochereau

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