Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements

G. Néau, F. Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau. Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. Microelectronics Reliability, 47(4-5):567-572, 2007. [doi]

@article{NeauMVVVBPR07,
  title = {Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements},
  author = {G. Néau and F. Martinez and M. Valenza and J. C. Vildeuil and E. Vincent and Frédéric Boeuf and F. Payet and K. Rochereau},
  year = {2007},
  doi = {10.1016/j.microrel.2007.01.079},
  url = {http://dx.doi.org/10.1016/j.microrel.2007.01.079},
  tags = {C++},
  researchr = {https://researchr.org/publication/NeauMVVVBPR07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {4-5},
  pages = {567-572},
}