Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka. K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Transactions, 95-C(8):1327-1331, 2012. [doi]
@article{NegoroKMNASUT12,
title = {K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W},
author = {Noboru Negoro and Masayuki Kuroda and Tomohiro Murata and Masaaki Nishijima and Yoshiharu Anda and Hiroyuki Sakai and Tetsuzo Ueda and Tsuyoshi Tanaka},
year = {2012},
url = {http://search.ieice.org/bin/summary.php?id=e95-c_8_1327},
researchr = {https://researchr.org/publication/NegoroKMNASUT12},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {95-C},
number = {8},
pages = {1327-1331},
}