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K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W

Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka. K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Transactions, 95-C(8):1327-1331, 2012. [doi]

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