Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing

K. L. Ng, Nian Zhan, C. W. Kok, M.-C. Poon, Hei Wong. Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. Microelectronics Reliability, 43(8):1289-1293, 2003. [doi]

@article{NgZKPW03,
  title = {Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing},
  author = {K. L. Ng and Nian Zhan and C. W. Kok and M.-C. Poon and Hei Wong},
  year = {2003},
  doi = {10.1016/S0026-2714(03)00141-0},
  url = {http://dx.doi.org/10.1016/S0026-2714(03)00141-0},
  tags = {C++},
  researchr = {https://researchr.org/publication/NgZKPW03},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {43},
  number = {8},
  pages = {1289-1293},
}