Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing

K. L. Ng, Nian Zhan, C. W. Kok, M.-C. Poon, Hei Wong. Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. Microelectronics Reliability, 43(8):1289-1293, 2003. [doi]

Abstract

Abstract is missing.