Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number

Quang Chuc Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Jean-Michel Reynes. Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number. In Andrzej Napieralksi, editor, 26th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2019, Rzeszów, Poland, June 27-29, 2019. pages 298-301, IEEE, 2019. [doi]

Abstract

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