A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation - researchr publication authors

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Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang. A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 346-347, IEEE, 2010. [doi]

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