A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation

Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang. A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 346-347, IEEE, 2010. [doi]

@inproceedings{NhoKHWKNBZ10,
  title = {A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation},
  author = {Hyunwoo Nho and Pramod Kolar and Fatih Hamzaoglu and Yih Wang and Eric Karl and Yong-Gee Ng and Uddalak Bhattacharya and Kevin Zhang},
  year = {2010},
  doi = {10.1109/ISSCC.2010.5433816},
  url = {http://dx.doi.org/10.1109/ISSCC.2010.5433816},
  researchr = {https://researchr.org/publication/NhoKHWKNBZ10},
  cites = {0},
  citedby = {0},
  pages = {346-347},
  booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010},
  publisher = {IEEE},
  isbn = {978-1-4244-6033-5},
}