Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation

Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Hirofumi Nakano, Kazuya Ishihara, Hiroyuki Kawai, Kazutami Arimoto. Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation. In Thomas Büchner, Ramalingam Sridhar, Andrew Marshall, Norbert Schuhmann, editors, Annual IEEE International SoC Conference, SoCC 2010, September 27-29, 2010, Las Vegas, NV, USA, Proceedings. pages 519-524, IEEE, 2010. [doi]

@inproceedings{NiiYFNIKA10,
  title = {Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation},
  author = {Koji Nii and Makoto Yabuuchi and Hidehiro Fujiwara and Hirofumi Nakano and Kazuya Ishihara and Hiroyuki Kawai and Kazutami Arimoto},
  year = {2010},
  doi = {10.1109/SOCC.2010.5784684},
  url = {http://dx.doi.org/10.1109/SOCC.2010.5784684},
  researchr = {https://researchr.org/publication/NiiYFNIKA10},
  cites = {0},
  citedby = {0},
  pages = {519-524},
  booktitle = {Annual IEEE International SoC Conference, SoCC 2010, September 27-29, 2010, Las Vegas, NV, USA, Proceedings},
  editor = {Thomas Büchner and Ramalingam Sridhar and Andrew Marshall and Norbert Schuhmann},
  publisher = {IEEE},
  isbn = {978-1-4244-6682-5},
}