Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance - researchr publication

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S. Nilamani, P. Chitra, V. N. Ramakrishnan. Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance. Microelectronics Reliability, 82:11-19, 2018. [doi]

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