Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays - researchr publication authors

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Shruti Nirantar, Md. Ataur Rahman, Edwin Mayes, Madhu Bhaskaran, Sumeet Walia, Sharath Sriram. Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays. Adv. Intell. Syst., 3(6):2000222, 2021. [doi]

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