Shruti Nirantar, Md. Ataur Rahman, Edwin Mayes, Madhu Bhaskaran, Sumeet Walia, Sharath Sriram. Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays. Adv. Intell. Syst., 3(6):2000222, 2021. [doi]
@article{NirantarRMBWS21,
title = {Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays},
author = {Shruti Nirantar and Md. Ataur Rahman and Edwin Mayes and Madhu Bhaskaran and Sumeet Walia and Sharath Sriram},
year = {2021},
doi = {10.1002/aisy.202000222},
url = {https://doi.org/10.1002/aisy.202000222},
researchr = {https://researchr.org/publication/NirantarRMBWS21},
cites = {0},
citedby = {0},
journal = {Adv. Intell. Syst.},
volume = {3},
number = {6},
pages = {2000222},
}