The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond

Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye. The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

@inproceedings{NohSZTY18,
  title = {The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond},
  author = {Jinhyun Noh and Mengwei Si and Hong Zhou and Marko J. Tadjer and Peide D. Ye},
  year = {2018},
  doi = {10.1109/DRC.2018.8442276},
  url = {https://doi.org/10.1109/DRC.2018.8442276},
  researchr = {https://researchr.org/publication/NohSZTY18},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-3028-0},
}