Modeling the charge transport mechanism in amorphous Al::2::O::3:: with multiphonon trap ionization effect - researchr publication authors

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Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, K. A. Nasyrov, Hei Wong. Modeling the charge transport mechanism in amorphous Al::2::O::3:: with multiphonon trap ionization effect. Microelectronics Reliability, 50(2):207-210, 2010. [doi]

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