Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, K. A. Nasyrov, Hei Wong. Modeling the charge transport mechanism in amorphous Al::2::O::3:: with multiphonon trap ionization effect. Microelectronics Reliability, 50(2):207-210, 2010. [doi]
@article{NovikovVGNW10,
title = {Modeling the charge transport mechanism in amorphous Al::2::O::3:: with multiphonon trap ionization effect},
author = {Yu. N. Novikov and A. V. Vishnyakov and V. A. Gritsenko and K. A. Nasyrov and Hei Wong},
year = {2010},
doi = {10.1016/j.microrel.2009.11.004},
url = {http://dx.doi.org/10.1016/j.microrel.2009.11.004},
tags = {modeling},
researchr = {https://researchr.org/publication/NovikovVGNW10},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {50},
number = {2},
pages = {207-210},
}