Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown - researchr publication authors

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Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, S. Rao, Wonsub Kim, S. Couet, J. Swerts, F. Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar. Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5-1, IEEE, 2018. [doi]

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