Ultrathin HfO::x::N::y:: Gate Insulator Formation by Electron Cyclotron Resonance Ar/N::2:: Plasma Nitridation of HfO::2:: Thin Films - researchr publication

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Shun ichiro Ohmi, Tomoki Kurose, Masaki Satoh. Ultrathin HfO::x::N::y:: Gate Insulator Formation by Electron Cyclotron Resonance Ar/N::2:: Plasma Nitridation of HfO::2:: Thin Films. IEICE Transactions, 89-C(5):596-601, 2006. [doi]

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