21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)

Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro-omi Ueda, Noriharu Suematsu, Tatsuo Oomori. 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs). J. Solid-State Circuits, 39(4):577-584, 2004. [doi]

@article{OhnakadoYMFTUSO04,
  title = {21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)},
  author = {Takahiro Ohnakado and Satoshi Yamakawa and Takaaki Murakami and Akihiko Furukawa and Eiji Taniguchi and Hiro-omi Ueda and Noriharu Suematsu and Tatsuo Oomori},
  year = {2004},
  doi = {10.1109/JSSC.2004.825231},
  url = {https://doi.org/10.1109/JSSC.2004.825231},
  researchr = {https://researchr.org/publication/OhnakadoYMFTUSO04},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {39},
  number = {4},
  pages = {577-584},
}