Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control - researchr publication authors

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Nicolo Oliva, Emanuele A. Casu, Matteo Cavalieri, Adrian M. Ionescu. Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 114-117, IEEE, 2018. [doi]

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