Electrical Masking Improvement with Standard Logic Cell Synthesis Using 45 nm Technology Node

Semiu A. Olowogemo, Ahmed Yiwere, Bor-Tyng Lin, Hao Qiu, William H. Robinson, Daniel B. Limbrick. Electrical Masking Improvement with Standard Logic Cell Synthesis Using 45 nm Technology Node. In 63rd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2020, Springfield, MA, USA, August 9-12, 2020. pages 619-622, IEEE, 2020. [doi]

@inproceedings{OlowogemoYLQRL20,
  title = {Electrical Masking Improvement with Standard Logic Cell Synthesis Using 45 nm Technology Node},
  author = {Semiu A. Olowogemo and Ahmed Yiwere and Bor-Tyng Lin and Hao Qiu and William H. Robinson and Daniel B. Limbrick},
  year = {2020},
  doi = {10.1109/MWSCAS48704.2020.9184651},
  url = {https://doi.org/10.1109/MWSCAS48704.2020.9184651},
  researchr = {https://researchr.org/publication/OlowogemoYLQRL20},
  cites = {0},
  citedby = {0},
  pages = {619-622},
  booktitle = {63rd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2020, Springfield, MA, USA, August 9-12, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-8058-8},
}