Alisha Oraon, Shradha Shreya, Renuka Kumari, Aminul Islam. A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET. In 7th International Symposium on Embedded Computing and System Design, ISED 2017, Durgapur, India, December 18-20, 2017. pages 1-5, IEEE, 2017. [doi]
@inproceedings{OraonSKI17,
title = {A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET},
author = {Alisha Oraon and Shradha Shreya and Renuka Kumari and Aminul Islam},
year = {2017},
doi = {10.1109/ISED.2017.8303939},
url = {https://doi.org/10.1109/ISED.2017.8303939},
researchr = {https://researchr.org/publication/OraonSKI17},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {7th International Symposium on Embedded Computing and System Design, ISED 2017, Durgapur, India, December 18-20, 2017},
publisher = {IEEE},
isbn = {978-1-5386-3032-7},
}