Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure - researchr publication authors

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Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier 0002, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn. Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectronics Reliability, 52(9-10):1812-1815, 2012. [doi]

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