Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier 0002, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn. Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectronics Reliability, 52(9-10):1812-1815, 2012. [doi]
@article{OstermaierLAHMAFDSPK12,
title = {Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure},
author = {Clemens Ostermaier and Peter Lagger and Mohammed Alomari and Patrick Herfurth and David Maier 0002 and Alexander Alexewicz and Marie-Antoinette di Forte-Poisson and Sylvain L. Delage and Gottfried Strasser and Dionyz Pogany and Erhard Kohn},
year = {2012},
doi = {10.1016/j.microrel.2012.06.006},
url = {http://dx.doi.org/10.1016/j.microrel.2012.06.006},
researchr = {https://researchr.org/publication/OstermaierLAHMAFDSPK12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {9-10},
pages = {1812-1815},
}