A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs

Taiichi Otsuji, Mikio Yoneyama, Koichi Murata, Eiichi Sano. A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs. J. Solid-State Circuits, 32(9):1357-1362, 1997. [doi]

@article{OtsujiYMS97,
  title = {A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs},
  author = {Taiichi Otsuji and Mikio Yoneyama and Koichi Murata and Eiichi Sano},
  year = {1997},
  doi = {10.1109/4.628739},
  url = {https://doi.org/10.1109/4.628739},
  researchr = {https://researchr.org/publication/OtsujiYMS97},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {32},
  number = {9},
  pages = {1357-1362},
}