Degradation rate for surface pitting in GaN HEMT

Bruce M. Paine, Vincent T. Ng, Steve R. Polmanter, Neil T. Kubota, Carl R. Ignacio. Degradation rate for surface pitting in GaN HEMT. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 1, IEEE, 2015. [doi]

@inproceedings{PaineNPKI15,
  title = {Degradation rate for surface pitting in GaN HEMT},
  author = {Bruce M. Paine and Vincent T. Ng and Steve R. Polmanter and Neil T. Kubota and Carl R. Ignacio},
  year = {2015},
  doi = {10.1109/IRPS.2015.7112786},
  url = {http://dx.doi.org/10.1109/IRPS.2015.7112786},
  researchr = {https://researchr.org/publication/PaineNPKI15},
  cites = {0},
  citedby = {0},
  pages = {1},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7362-3},
}