InGaAs Diodes for Terahertz Sensing - Effect of Molecular Beam Epitaxy Growth Conditions

Vilius Palenskis, Linas Minkevicius, Jonas Matukas, Domas Jokubauskis, Sandra Pralgauskaite, Dalius Seliuta, Bronislovas Cechavicius, Renata Butkute, Gintaras Valusis. InGaAs Diodes for Terahertz Sensing - Effect of Molecular Beam Epitaxy Growth Conditions. Sensors, 18(11):3760, 2018. [doi]

Abstract

Abstract is missing.