Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203

Paolo Paletti, Alan C. Seabaugh, Ruoyu Yue, Christopher L. Hinkle. Electric Double Layer Esaki Tunnel Junction in a 40-nm-Length, WSe2 Channel Grown by Molecular Beam Epitaxy on Al203. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 110-113, IEEE, 2018. [doi]