Deepak Kumar Panda, Rajan Singh, Trupti Ranjan Lenka, Thi Tan Pham, Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Hieu Pham Trung Nguyen. Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study. IET Circuits, Devices & Systems, 14(7):1018-1025, 2020. [doi]
Abstract is missing.