Physical degradation of GaN HEMT devices under high drain bias reliability testing - researchr publication authors

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S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim. Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectronics Reliability, 49(5):478-483, 2009. [doi]

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