S. Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam, Paul Saunier, Tony Balistreri, Moon J. Kim. Physical degradation of GaN HEMT devices under high drain bias reliability testing. Microelectronics Reliability, 49(5):478-483, 2009. [doi]
@article{ParkFCJLBSBK09,
title = {Physical degradation of GaN HEMT devices under high drain bias reliability testing},
author = {S. Y. Park and Carlo Floresca and Uttiya Chowdhury and Jose L. Jimenez and Cathy Lee and Edward Beam and Paul Saunier and Tony Balistreri and Moon J. Kim},
year = {2009},
doi = {10.1016/j.microrel.2009.02.015},
url = {http://dx.doi.org/10.1016/j.microrel.2009.02.015},
tags = {testing, reliability},
researchr = {https://researchr.org/publication/ParkFCJLBSBK09},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {49},
number = {5},
pages = {478-483},
}