19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Ki Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyungwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung Jun Kim, Sungwhan Seo, Hyung Gon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-Hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, SungSoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi. 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 334-335, IEEE, 2014. [doi]

Abstract

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