Hong June Park, Choong-Ki Kim. An Empirical Model for the Threshold Voltage of Enhancement NMOSFET s. IEEE Trans. on CAD of Integrated Circuits and Systems, 4(4):629-635, 1985. [doi]
@article{ParkK85,
title = {An Empirical Model for the Threshold Voltage of Enhancement NMOSFET s},
author = {Hong June Park and Choong-Ki Kim},
year = {1985},
url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=28434&arnumber=1270163&count=37&index=30},
tags = {empirical},
researchr = {https://researchr.org/publication/ParkK85},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {4},
number = {4},
pages = {629-635},
}