Gate oxide trap characterization under DC and pulse stress

Sangku Park, Jaehoon Lee, Y. Ryu, J. Kang, B. So, Dohyun Baek. Gate oxide trap characterization under DC and pulse stress. In 17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, Athens, Greece, 12-15 December, 2010. pages 289-292, IEEE, 2010. [doi]

Abstract

Abstract is missing.