A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core

Dae-Woong Park, Dzuhri Radityo Utomo, Bao Huu Lam, Sang-Gug Lee, Jong-Phil Hong. A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core. J. Solid-State Circuits, 54(6):1613-1623, 2019. [doi]

@article{ParkULLH19,
  title = {A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core},
  author = {Dae-Woong Park and Dzuhri Radityo Utomo and Bao Huu Lam and Sang-Gug Lee and Jong-Phil Hong},
  year = {2019},
  doi = {10.1109/JSSC.2019.2899515},
  url = {https://doi.org/10.1109/JSSC.2019.2899515},
  researchr = {https://researchr.org/publication/ParkULLH19},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {54},
  number = {6},
  pages = {1613-1623},
}