Anthony E. Parker, Simon J. Mahon. GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 300-303, IEEE, 2023. [doi]
@inproceedings{ParkerM23,
title = {GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications},
author = {Anthony E. Parker and Simon J. Mahon},
year = {2023},
doi = {10.1109/BCICTS54660.2023.10310982},
url = {https://doi.org/10.1109/BCICTS54660.2023.10310982},
researchr = {https://researchr.org/publication/ParkerM23},
cites = {0},
citedby = {0},
pages = {300-303},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023},
publisher = {IEEE},
isbn = {979-8-3503-0764-1},
}