Table of Contents

• 3D Heterogeneous Integration (3DHI): An Enabler For Next Generation RF SystemsThomas Kazior, Sharon Woodruff, Gregory Jones, Iskren Abdomerovic. 1-4 [doi]
• Practical Approaches to Industrializing Near-THz Communication SystemsShahriar Shahramian, Mustafa Sayginer, Michael J. Holyoak, Mohamed Elkhouly, Mike Zierdt, Jaegeun Ha, Joe Weiner, Yves Baeyens. 5-8 [doi]
• A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter LengthBin Li, Andre G. Metzger, Cristian Cismaru, Yingying Yang. 9-11 [doi]
• Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control RelationMarkus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui, Colombo R. Bolognesi, Christoph Jungemann, Michael Schröter. 12-15 [doi]
• Practical and Efficient Approaches to Device Modeling and Power Amplifier Module DesignHans Rohdin, Bart Jansen, William Snodgrass, J. Stephen Kofol, Sonja Nedeljkovic, Ziad El Chami, William Sutton, Tom Dungan. 16-23 [doi]
• Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector LayersF. Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi. 24-27 [doi]
• A 12 Bit R-2R Digital-to-Analog Converter for Shuttling Operation in a Trapped-Ion Quantum ComputerAlexander Meyer, Peter Toth, Axel Engelhardt, Jens Repp, Matthias Brand, Vadim Issakov. 28-31 [doi]
• Vertical Power Delivery and Heterogeneous Integration for High-Performance ComputingHanh-Phuc Le, Casey Hardy, Hieu Pham, Mohamed Mehdi Jatlaoui, Frederic Voiron, Patrick P. Mercier, Po-Han Chen, Saket Jha. 32-35 [doi]
• A Circuit Designer's Perspective on Transistor Modelling Challenges for 6G, Fiberoptics, and Quantum Computing ICsSorin P. Voinigescu, Shai Bonen, Suyash Pati Tripathi, Saurabh Bagchi, Gregory Cooke, T. Jager, Akash Bharadwaj, Jessica Zhao. 36-43 [doi]
• Electro-Thermal Investigation of SiGe HBTs: A ReviewThomas Zimmer, Sébastien Fregonese, Anjan Chakravorty. 44-49 [doi]
• Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBTBeng Woon Lim, Ajay Raman, Saurabh Sirohi. 50-53 [doi]
• A Physically-Based Matching Model for HiSIM_HVRachid Hamani, João Roberto Raposo De Oliveira Martins, Hagen Wald, Joerg Gessner, Michaelina Ong Ing Ing. 54-57 [doi]
• Cryogenic Modeling for Open-Source Process Design Kit TechnologyAkin Akturk, Ayushman Tripathi, Mehdi Saligane. 58-65 [doi]
• Flipchip Characterization for RF SOI Switch Model ImprovementKathleen Muhonen, Jayashree Jayabalan, Scott Parker. 66-69 [doi]
• A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G ApplicationsDongyang Yan, Yang Zhang 0081, Dries Peumans, Mark Ingels, Piet Wambacq. 70-73 [doi]
• A 4-18 GHz, 35 W GaN MMIC Power Amplifier with Improved Thermal PerformanceMichael Litchfield, Andrew Kingswood. 74-77 [doi]
• Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space ApplicationsSimon Mok, Norman Chiang, Vivian Law, James J. Sowers. 78-81 [doi]
• Transient Field-Plate Thermometry in Cascode FET Power AmplifiersDavid J. Niven, Simon J. Mahon, Andrew J. Jones, Melissa C. Gorman. 82-85 [doi]
• A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBTSenne Gielen, Yang Zhang 0081, Mark Ingels, Patrick Reynaert. 86-89 [doi]
• Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical TransceiversVenkata Vanukuru, Hari Kakara, Santosh Gedela, Vaibhav Ruparelia, Prateek Kumar Sharma. 90-93 [doi]
• D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT TechnologyAmirreza Alizadeh, Utku Soylu, Navneet Sharma, Gary Xu, Mark J. W. Rodwell. 94-97 [doi]
• A High Linearity SiGe D-Band Diode Ring MixerOlga Krylova, Jan Schopfel, Klaus Aufinger, Nils Pohl. 98-101 [doi]
• A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar SensorsBatuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen. 102-105 [doi]
• Demonstration of a Ku-Band N-Path Downconverter in GaN-on-SiCDamla Dimlioglu, Alyosha C. Molnar. 106-109 [doi]
• Gen1 Active Tunable SiGe Integrated Parallel Synthesis Filters (PSF) without Q-EnhancementFarooq Amin, Shuai Zhou, Long Huang, Christopher Latorre, Folu Popoola, Parrish Ralston. 110-113 [doi]
• Wideband Switched-Capacitor and Switched-Transmission-line Circulators in 40nm GaN Technology: Design and Device ModelingHari Vemuri, Armagan Dascurcu, Kexin Li, Harish Krishnaswamy. 114-117 [doi]
• Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave ApplicationsDan Denninghoff, F. Erdem Arkun, Jeong-sun Moon, Haidang Tran, Andrea L. Corrion, Georges Siddiqi, David Fanning, Micha Fireman, J. Tai, Joel Wong, Bob Grabar, C. Dao, Ivan Milosavljevic, Ryan Tran, Ariel Getter, Andrew Clapper, S. Dadafshar, J. Georgieva, H. Moyer, Nicholas C. Miller, Michael Elliott, Ryan Gilbert. 118-123 [doi]
• Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHzRob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen. 124-127 [doi]
• On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related MaterialsMohamadali Malakoutian, Srabanti Chowdhury. 128-131 [doi]
• AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric FunctionalityJoseph Casamento, Kazuki Nomoto, Thai Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li 0023, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena. 132-136 [doi]
• High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory EffectsB. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu. 137-140 [doi]
• Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit ProcessDavid Fanning, Andrea L. Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, F. Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos, Harris Moyer, Andy Fu, John Carlson, Shyam Bharadwaj. 141-144 [doi]
• Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHzSara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi. 145-148 [doi]
• 100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator AssemblyRomain Hersent, Filipe Jorge, Fabrice Blache, Bernadette Duval, Michel Goix, Haïk Mardoyan, Sylvain Almonacil, M. Xu, Y. Zhu, L. Chen, Z. Hu, Jeremie Renaudier, Muriel Riet, Agnieszka Konczykowska, Bertrand Ardouin. 149-152 [doi]
• High-Speed SiGe BiCMOS Circuits for Optical CommunicationGuy Torfs, Bart Moeneclaey, Joris Lambrecht, Cedric Bruynsteen, Jakob Declerq, Shengpu Niu, Nishant Singh, Marijn Verbeke, Xin Yin, Peter Ossieur, Johan Bauwelinck. 153-158 [doi]
• A 19-dB Peaking at 72-GHz and 4.1-Vppd Output Swing SiGe BiCMOS Linear Driver with Dynamic Cascode Output BufferHiroshi Uemura, Taichi Misawa, Naoki Itabashi, Munetaka Kurokawa, Yoshiyuki Sugimoto, Seiji Kumagai, Masaru Takechi, Keiji Tanaka. 159-162 [doi]
• A Shunt-Feedback TIA with Common-Base Variable Gain Input Stage for 128-GBaud Coherent CommunicationSeiji Kumagai, Yoshiyuki Sugimoto, Hiroshi Uemura, Munetaka Kurokawa, Naoki Itabashi, Masaru Takechi, Takuya Okimoto, Keiji Tanaka. 163-166 [doi]
• Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance AmplifiersPrateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain. 167-170 [doi]
• A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias TerminationJustin J. Kim, Wonho Lee, James F. Buckwalter. 171-174 [doi]
• A 15-24 GHz, 15W Reactively Matched GaN MMIC Power AmplifierMichael Litchfield. 175-178 [doi]
• An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOSJeff Shih-Chieh Chien, Eythan Lam, James F. Buckwalter. 179-182 [doi]
• D-Band 4-ch Antenna-on-Chip Phased-Array TX Front-EndToshihide Kuwabara, Naoki Oshima, Koki Tanji, Noriaki Tawa, Shinji Hachiyama, Tomoya Kaneko. 183-186 [doi]
• Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka BandsA. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, Michel Buczko, S. Jan, N. Derrier, Didier Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, I D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, Pascal Chevalier 0002. 187-190 [doi]
• A 28-Gb/s 27.2mW NRZ Full-Rate Bang-Bang Clock and Data Recovery in 22 nm FD-SOI CMOS TechnologyMohammed Iftekhar, Harshan Gowda, Pascal Kneuper, Babak Sadiye, Wolfgang Mueller, Johann-Christoph Scheytt. 191-194 [doi]
• A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal GenerationTeruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi. 195-198 [doi]
• An 80-GBaud PAM-4 $G_{\mathrm{m}}$ -Boosted Variable-Gain TIA in 22-nm FDSOIJianan Zhao, Sorin P. Voinigescu. 199-202 [doi]
• Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS TechnologyShuvadip Ghosh, Hao Li 0053, Nils Pohl. 203-206 [doi]
• Quad-Channel 100-GHz-Bandwidth InP- HBT-Based Linear Amplifier Module for High Symbol Rate CommunicationsHitoshi Wakita, Teruo Jyo, Munehiko Nagatani, Hiroyuki Takahashi. 207-210 [doi]
• 46-102 GHz GaN Balanced Cascode Amplifier-IsolatorAnthony Romano, Timothy Sonnenberg, Zoya Popovic. 211-214 [doi]
• A Wideband Ultra-Low Noise 15-55 GHz Dual-Beam Receive Phased-Array Beamformer with 2.9-4.2 dB NFOmar Hassan, Mir Mahmud, Abdulrahman A. Alhamed, Gabriel M. Rebeiz. 215-218 [doi]
• Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological ApplicationsAxel Tessmann, Arnulf Leuther, Fabian Thome, Laurenz John, Bersant Gashi, Hermann Massler, Alexander Saam, Sébastien Chartier. 219-224 [doi]
• GaN/Si 37-40 GHz T/R Chip MMIC for 5G CommunicationsM. El Kaamouchi, A. Gasmi, Bartosz Wróblewski, Rémy Leblanc, J. Poulain, P. Altuntas. 225-228 [doi]
• 120 GHz GaAs Single-Balanced MixerNethini Weerathunge, Simon J. Mahon, Gerry McCulloch, Sudipta Chakraborty. 229-232 [doi]
• A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOSJustin Romstadt, Tobias Welling, Florian Vogelsang, Muhammed Ali Yildirim, Klaus Aufinger, Nils Pohl. 233-236 [doi]
• A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional BandwidthMelika Dedovic, Florian Vogelsang, Hakan Papurcu, Klaus Aufinger, Nils Pohl. 237-240 [doi]
• A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N JunctionShinji Hachiyama, Koki Tanji, Toshihide Kuwabara, Naoki Oshima, Kazuaki Kunihiro, Tomoya Kaneko. 241-244 [doi]
• Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTsDimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan. 245-248 [doi]
• Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTsChristoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter. 249-252 [doi]
• The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTsHarrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler. 253-256 [doi]
• High Volume Wafer Fab Equipment for RF TechnologiesMike Peters, David A. Britz, Miao-Chun Chen, Manish Hemkar, Andy Lo. 257-262 [doi]
• Monolithic Silicon PhotonicsTed Letavic, Massimo Sorbara, Ken Geiwont, Yusheng Bian, Vihbor Jain, Sameer Jain, Koushik Ramachandran, Zhuo-Jie Wu, Brittany Hedrick, Kevin K. Dezfulian, Yarong Lin, Teck Jung Tang, Thomas Houghton, Daniel Fisher, Takako Hirokawa, Monica Esopi, Vaishnavi Karra, Won Suk Lee, Michelle Zhang, Ryan Sporer, Jorge Lubguban, Jae-kyu Cho, Rongtao Cao, Hanyi Ding, Sujith Chandran, Michal Rakowski, Abdelsalam Aboketaf, Subramanian Krishnamurthy, Scott Mills, Norman Robson, Ian Melville, Robert Fox, Vikas Gupta, Anthony Yu. 263-269 [doi]
• The Impact of BEOL Stress on SiGe HBTs at Cryogenic TemperaturesJackson P. Moody, Jeffrey W. Teng, John D. Cressler. 270-273 [doi]
• The SiGe HBT at Cryogenic Temperatures: Invited PagerJohn D. Cressler. 274-279 [doi]
• A 202 GHz Link Using Planar Transceiver ModulesUtku Soylu, Amirreza Alizadeh, Munkyo Seo, Ahmed S. H. Ahmed, Mark J. W. Rodwell. 280-283 [doi]
• Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT TechnologyLaurenz John, Thomas Merkle, Arnulf Leuther, Jaehoon Chung. 284-287 [doi]
• Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) ApplicationsCristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay. 288-291 [doi]
• Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound SemiconductorsEthan Chou, Hesham Beshary, Meng Wei, Rami Hijab, Farhana Sheikh, Steven Callender, Ali M. Niknejad. 292-299 [doi]
• GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF ApplicationsAnthony E. Parker, Simon J. Mahon. 300-303 [doi]
• Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF AmplifiersMarvin Marbell, Yueying Liu, Michelle Tran, Haedong Jang, Mehdi Hasan, Dan Etter, Dan Namishia, Dan Stasiw, Jeremy Fisher, Scott T. Sheppard, Basim Noori. 304-309 [doi]
• Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body DiodeArman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu. 310-313 [doi]
• Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-ResistanceIvan Berdalovic, Mirko Poljak, Tomislav Suligoj. 314-317 [doi]