Norman Robson - researchr alias

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Viewing Publication 1 - 14 from 14

2023

Polarization mode dispersion in CMOS-integrated monolithic SiPh components: simulations and experimentsYusheng Bian, Hanyi Ding, Abdelsalam Aboketaf, Vaishnavi Karra, Massimo Sorbara, Takako Hirokawa, Salman Mosleh, Crystal Hedges, Won Suk Lee, Sujith Chandran, Avijit Chatterjee, Riddhi Nandi, Ken Giewont, Karen Nummy, Alon Gabbay, Yannick de Koninck, Jochem Verbist, Santiago Echeverri, Liron Gantz, Qidi Liu, Dylan Logan, Omid Jafari, Kyle Murray, Edgar Huante-Ceron, Subharup Roy, Paul Webster-Pact, Michal Rakowski, Kevin K. Dezfulian, Andy Stricker, Thomas Houghton, Keith Donegan, Ryan Sporer, Jae-kyu Cho, Farid Barakat, Dan Moy, Zhuo-Jie Wu, Subramanian Krishnamurthy, Arman Najafi, Seyedeh Fahimeh Banihashemian, Rick Mincar, Ranjani Sirdeshmukh, Norman Robson, Ian Melville, Rod Augur, Jae-Gon Lee, Wenhe Lin, George Gifford, Robert Fox, Vikas Gupta, Anthony Yu, John Pellerin, Ted Letavic. ofc 2023: 1-3 [doi]

Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic SealZhuo-Jie Wu, Ping-Chuan Wang, Seungman Choi, Patrick Justison, Martin Gall, Jae-kyu Cho, Takako Hirokawa, Yusheng Bian, Thomas Houghton, Vaishnavi Karra, Dan Moy, Karen Nummy, Dave Riggs, Norman Robson, Ian Melville, Ken Giewont. ofc 2023: 1-3 [doi]

2021

3D-Split SRAM: Enabling Generational Gains in Advanced CMOSR. Mathur, M. Bhargava, H. Perry, Alberto Cestero, F. Frederick, S. Hung, C. Chao, D. Smith, D. Fisher, Norman Robson, X. Xu, Pranavi Chandupatla, R. Balachandran, S. Sinha, B. Cline, Jaydeep P. Kulkarni. cicc 2021: 1-2 [doi]

2016

Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-ViasToshiaki Kirihata, John Golz, Matthew R. Wordeman, Pooja Batra, Gary W. Maier, Norman Robson, Troy L. Graves-abe, Daniel Berger, Subramanian S. Iyer. esticas, 6(3):373-384, 2016. [doi]

2015

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applicationsChandrasekharan Kothandaraman, X. Chen, Dan Moy, D. Lea, Sami Rosenblatt, F. Khan, D. Leu, Toshiaki Kirihata, D. Ioannou, G. La Rosa, J. B. Johnson, Norman Robson, Subramanian S. Iyer. irps 2015: 2 [doi]

2013

Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAMSami Rosenblatt, Daniel Fainstein, Alberto Cestero, John Safran, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer. jssc, 48(4):940-947, 2013. [doi]

A Self-Authenticating Chip Architecture Using an Intrinsic Fingerprint of Embedded DRAMSami Rosenblatt, Srivatsan Chellappa, Alberto Cestero, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer. jssc, 48(11):2934-2943, 2013. [doi]

2012

Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAMDaniel Fainstein, Sami Rosenblatt, Alberto Cestero, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer. vlsic 2012: 146-147 [doi]

2008

A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOSGregory Uhlmann, Tony Aipperspach, Toshiaki Kirihata, K. Chandrasekharan, Yan Zun Li, Chris Paone, Brian Reed, Norman Robson, John Safran, David Schmitt, Subramanian S. Iyer. isscc 2008: 406-407 [doi]

2007

Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic ChipsNorman Robson, John Safran, Chandrasekharan Kothandaraman, Alberto Cestero, Xiang Chen, Raj Rajeevakumar, Alan Leslie, Dan Moy, Toshiaki Kirihata, Subramanian S. Iyer. cicc 2007: 799-804 [doi]

2005

An 800-MHz embedded DRAM with a concurrent refresh modeToshiaki Kirihata, Paul C. Parries, David R. Hanson, Hoki Kim, John Golz, Gregory Fredeman, Raj Rajeevakumar, John Griesemer, Norman Robson, Alberto Cestero, Babar A. Khan, Geng Wang, Matt Wordeman, Subramanian S. Iyer. jssc, 40(6):1377-1387, 2005. [doi]

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