High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects

B. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu. High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 137-140, IEEE, 2023. [doi]

Abstract

Abstract is missing.