High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects - researchr publication authors

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B. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu. High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 137-140, IEEE, 2023. [doi]

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