B. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu. High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. pages 137-140, IEEE, 2023. [doi]
@inproceedings{GroteGGWHRWRBFVCZKASFHH23,
title = {High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects},
author = {B. Grote and B. Green and C. Gaw and Y. Wei and D. Hill and P. Renaud and J. Wan and C. Rampley and D. Burdeaux and K. Foxx and M. Vadipour and D. Currier and C. Zhu and H. Kabir and T. Arnold and H. Stewart and D. Ferguson and J. Higginbottom and P. Hu},
year = {2023},
doi = {10.1109/BCICTS54660.2023.10310678},
url = {https://doi.org/10.1109/BCICTS54660.2023.10310678},
researchr = {https://researchr.org/publication/GroteGGWHRWRBFVCZKASFHH23},
cites = {0},
citedby = {0},
pages = {137-140},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023},
publisher = {IEEE},
isbn = {979-8-3503-0764-1},
}