A 55nm Ultra Low Leakage Deeply Depleted Channel technology optimized for energy minimization in subthreshold SRAM and logic

Harsh N. Patel, Abhishek Roy, Farah B. Yahya, Ningxi Liu, Benton H. Calhoun, Kazuyuki Kumeno, Makoto Yasuda, Akihiko Harada, Taiji Ema. A 55nm Ultra Low Leakage Deeply Depleted Channel technology optimized for energy minimization in subthreshold SRAM and logic. In nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016. pages 45-48, IEEE, 2016. [doi]

Abstract

Abstract is missing.