Ravi Patel, Kan Xu, Eby G. Friedman, Praveen Raghavan. Exploratory Power Noise Models of Standard Cell 14, 10, and 7 nm FinFET ICs. In Ayse Kivilcim Coskun, Martin Margala, Laleh Behjat, Jie Han, editors, Proceedings of the 26th edition on Great Lakes Symposium on VLSI, GLVLSI 2016, Boston, MA, USA, May 18-20, 2016. pages 233-238, ACM, 2016. [doi]
Abstract is missing.