Investigation of TCADs Models for Characterization of Sub 16 nm In _0.53 Ga _0.47 As FinFET - researchr publication authors

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J. Pathak, A. Darji. Investigation of TCADs Models for Characterization of Sub 16 nm In _0.53 Ga _0.47 As FinFET. In Brajesh Kumar Kaushik, Sudeb Dasgupta, Virendra Singh, editors, VLSI Design and Test - 21st International Symposium, VDAT 2017, Roorkee, India, June 29 - July 2, 2017, Revised Selected Papers. Volume 711 of Communications in Computer and Information Science, pages 279-286, Springer, 2017. [doi]

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